The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2019

Filed:

Feb. 21, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Yuya Takamura, Iwate, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/52 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/345 (2013.01); C23C 16/45523 (2013.01); C23C 16/45574 (2013.01); C23C 16/45578 (2013.01); C23C 16/52 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01);
Abstract

A film forming method of depositing a thin film of a reaction product generated by a reaction between a raw material gas and a reactive gas on a substrate by alternately supplying the raw material gas and the reactive gas to the substrate accommodated in a processing container. The film forming method includes: storing the raw material gas in a reservoir; adsorbing the raw material gas on the substrate by supplying the raw material gas stored in the reservoir to the substrate; and reacting the raw material gas and the reactive gas with each other by supplying the reactive gas to the substrate on which the raw material gas is adsorbed to generate the reaction product; wherein the storing, the adsorbing, and the reacting are repeated a plurality of times, while a condition for the storing is changed at least once.


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