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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10295907 B1

PDFFull Text
Date of Patent:
May. 21, 2019

Filed:

May. 11, 2015

Resist underlayer film-forming composition for lithography containing polymer having acrylamide structure and acrylic acid ester structure

Applicant:

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Ryo Karasawa, Toyama, JP;

Yasunobu Someya, Toyama, JP;

Takafumi Endo, Toyama, JP;

Tokio Nishita, Toyama, JP;

Rikimaru Sakamoto, Toyama, JP;

Assignee:

NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Cynthia Hamilton

Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/26 (2006.01); G03F 7/40 (2006.01); C08F 220/14 (2006.01); C08F 220/58 (2006.01); C09D 133/26 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08F 220/14 (2013.01); C08F 220/58 (2013.01); C09D 133/26 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2002 (2013.01); G03F 7/2037 (2013.01); G03F 7/26 (2013.01); G03F 7/40 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/0271 (2013.01); H01L 21/0332 (2013.01);
Abstract

A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. A resist underlayer film-forming composition for lithography includes a polymer (A) including a unit structure of Formula (1) and a unit structure of Formula (2); a crosslinkable compound (B) having at least two groups selected from blocked isocyanate groups, methylol group, or Calkoxy methyl groups; and a solvent (C), characterized in that the polymer (A) is a polymer in which the unit structure of Formula (1) and the unit structure of Formula (2) are copolymerized in a mol % ratio of the unit structure of Formula (1):the unit structure of Formula (2)=25 to 60:75 to 40.

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