The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Dec. 20, 2017
Macronix International Co., Ltd., Hsinchu, TW;
Chang-Wen Jian, New Taipei, TW;
Hsiang-Lu Wu, Taoyuan, TW;
Yu-Min Hung, Taichung, TW;
Tzung-Ting Han, Hsinchu, TW;
MACRONXI International Co., Ltd., Hsinchu, TW;
Abstract
A method for manufacturing semiconductor device is provided. A substrate having a memory region and a capacitance region is provided. A plurality of word line structures are formed on the memory region of the substrate. A capacitance structure is formed on the capacitance region of the substrate. The word line structures and the capacitance structure each include a first dielectric layer on the substrate, a first conductive layer on the first dielectric layer, a second dielectric layer on the first conductive layer, and a second conductive layer on the second dielectric layer. The second conductive layers of the word line structures close to an edge of the memory region and a portion of the second conductive layer of the capacitance structure are removed at the same time to form a trench exposing a portion of the second dielectric layer.