The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Sep. 25, 2015
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Yusuke Hirayama, Miyagi, JP;
Masaaki Miyagawa, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/44 (2006.01); H01L 21/205 (2006.01); H01L 21/3065 (2006.01); H05H 1/46 (2006.01); B29C 59/14 (2006.01); C23C 16/02 (2006.01); C23C 16/509 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32862 (2013.01); B29C 59/14 (2013.01); C23C 16/0272 (2013.01); C23C 16/44 (2013.01); C23C 16/4405 (2013.01); C23C 16/509 (2013.01); H01J 37/32009 (2013.01); H01J 37/32082 (2013.01); H01J 37/32165 (2013.01); H01J 37/32532 (2013.01); H01J 37/32917 (2013.01); H01L 21/205 (2013.01); H01L 21/3065 (2013.01); H05H 1/46 (2013.01); C23C 16/4404 (2013.01); H01J 37/32477 (2013.01); H01J 37/32495 (2013.01); H01J 2237/334 (2013.01);
Abstract
A plasma processing method including: a film formation step of forming a silicon-containing film on a surface of a member inside a chamber by plasma of a silicon-containing gas and a reducing gas; a plasma processing step of plasma-processing a workpiece carried into the chamber by plasma of a processing gas after the silicon-containing film is formed on the surface of the member; and a removal step of removing the silicon-containing film from the surface of the member by plasma of a fluorine-containing gas after the plasma-processed workpiece is carried out of the chamber.