The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Apr. 01, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-chu, TW;
Inventors:
Ru-Gun Liu, Zhubei, TW;
Chun-Yi Lee, Xiaofenlin, TW;
Jyh-Kang Ting, Baoshan Township, TW;
Juing-Yi Wu, Hsinchu, TW;
Liang-Yao Lee, Yaoyuan, TW;
Tung-Heng Hsieh, Zhudong Town, TW;
Tsung-Chieh Tsai, Chu-Bei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); G06F 17/50 (2006.01); H01L 21/8238 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 17/5072 (2013.01); G06F 17/5081 (2013.01); H01L 21/76816 (2013.01); H01L 21/76895 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes two elongated active regions that include source/drain regions for multiple transistor devices, a first contact layer that includes an electrical connection between the two active regions, a second contact layer that includes a connection between two gate lines, and a gate contact layer that provides connections to the gate lines.