The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Apr. 21, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shih-Wen Huang, Tainan, TW;
Yun-Wen Chu, Kaohsiung, TW;
Hong-Hsien Ke, Changhua County, TW;
Chia-Hui Lin, Taichung, TW;
Shin-Yeu Tsai, Zhubei, TW;
Shih-Chieh Chang, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Semiconductor device structures and methods for forming the same are provided. A method for forming a semiconductor device structure includes forming a gate structure over a semiconductor substrate. The method also includes forming spacer elements adjoining sidewalls of the gate structure. The method further includes forming a protection material layer over the gate structure. The formation of the protection material layer includes a substantial non-plasma process. In addition, the method includes depositing a dielectric material layer over the protection material layer. The deposition of the dielectric material layer includes a plasma-involved process.