The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Jul. 19, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zonghui Su, San Jose, CA (US);

Vinay Prabhakar, Cupertino, CA (US);

Abdul Aziz Khaja, San Jose, CA (US);

Jeongmin Lee, Sunnyvale, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); B08B 7/00 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02087 (2013.01); B08B 7/0035 (2013.01); H01J 37/3244 (2013.01); H01J 37/32715 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01J 37/32357 (2013.01); H01J 2237/334 (2013.01);
Abstract

Implementations described herein generally relate to methods and apparatus for processing a substrate. More particularly, implementations described herein relate to methods and an apparatus for bevel etch processing. In one embodiment, a method of cleaning a bevel edge of a semiconductor substrate is provided. The method includes placing a substrate on a cover plate inside of a processing chamber, the substrate having a deposition layer, which includes a center, and a bevel edge. A mask is placed over the substrate. The edge ring is disposed around/under the substrate. The method also includes flowing a process gas mixture adjacent the bevel edge, and flowing a purge gas through a first hole, a second hole, and a third hole of the mask in the center of the substrate adjacent a top of the substrate.


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