The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Feb. 03, 2016
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Alexei Marakhtanov, Albany, CA (US);

Eric A Hudson, Berkeley, CA (US);

Rajinder Dhindsa, San Jose, CA (US);

Neil Benjamin, Palo Alto, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32091 (2013.01); H01J 37/321 (2013.01); H01J 37/3211 (2013.01); H01J 37/3266 (2013.01); H01J 37/32532 (2013.01); H01J 37/32669 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract

A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.


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