The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Nov. 18, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chao-Hung Wang, Taipei, TW;
Yen-Yi Wu, Taipei, TW;
Shih-Chun Chen, Taipei, TW;
Yao-Wen Chang, Taipei, TW;
Meng-Kai Hsu, Xinfeng Township, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for legalizing mixed-cell height standard cells of an IC is provided. A target standard cell is obtained in a window of a global placement. The target standard cell has a first area overlapping a first standard cell located in a first row of the window, and a second area overlapping a second standard cell located in a second row of the window. The target standard cell and the first standard cell are moved until the target standard cell does not overlap the first standard cell in the first row of the window. The target standard cell and the first standard cell are clustered as a first cluster when the target standard cell does not overlap the first standard cell. The first cluster is moved away from the second standard cell in the second row until the second standard cell does not overlap the first cluster.