The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Mar. 31, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Ching-Hung Lai, Hsinchu, TW;
Chih-Chung Huang, Hsinchu, TW;
Chih-Chiang Tu, Tauyen, TW;
Chung-Hung Lin, Tainan, TW;
Chi-Ming Tsai, Taipei, TW;
Ming-Ho Tsai, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/22 (2012.01); G03F 1/36 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/36 (2013.01); G03F 1/22 (2013.01); G03F 7/7015 (2013.01); G03F 7/70441 (2013.01);
Abstract
A mask includes a transparent substrate, a first pattern, a second pattern, and a sub-resolution auxiliary feature. The first pattern and the second pattern are over the transparent substrate. The first pattern has an area of 0.16 μmto 60000 μm. The second pattern has an area of 0.16 μmto 60000 μm. The sub-resolution auxiliary feature is over the transparent substrate and connects the first pattern and the second pattern.