logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10269944 B1

PDFFull Text
Date of Patent:
Apr. 23, 2019

Filed:

Jun. 12, 2017

Fin semiconductor device and method of manufacture with source/drain regions having opposite conductivities

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Blandine Duriez, Brussels, BE;

Aryan Afzalian, Chastre, BE;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Eric A Ward

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 21/266 (2006.01); H01L 21/306 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7391 (2013.01); H01L 21/266 (2013.01); H01L 21/30604 (2013.01); H01L 29/20 (2013.01); H01L 29/66356 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01);
Abstract

A semiconductor device and method of manufacturing a semiconductor device using a semiconductor fin is provided. In an embodiment the fin is formed from a substrate, a middle section of the fin is covered, and then portions of the fin on either side of the middle section are removed. A series of implants is then performed and a gate dielectric and a gate electrode are formed to form a tunneling field effect transistor from the fin.

Find Patent Forward Citations

Duriez, Blandine. (2019). Fin semiconductor device and method of manufacture with source/drain regions having opposite conductivities (U.S. Patent No. 10269944). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10269944

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…