IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10269893 B1

PDFFull Text
Date of Patent:
Apr. 23, 2019

Filed:

Nov. 30, 2017

Method and system for mom capacitance value control

Applicant:

Shanghai Huali Microelectronics Corporation, Shanghai, CN;

Inventors:

Yeqing Cui, Shanghai, CN;

Ran Huang, Shanghai, CN;

Jianning Deng, Shanghai, CN;

Assignee:

SHANGHAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;

Attorney:

Tianchen LLC

Primary Examiner:

Karen Kusumakar

Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/66 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); G01R 27/26 (2006.01); G01R 31/26 (2014.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/285 (2006.01); H01L 21/288 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); G01R 27/2605 (2013.01); G01R 31/2639 (2013.01); H01L 21/3212 (2013.01); H01L 21/67253 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 22/20 (2013.01); H01L 23/5223 (2013.01); H01L 21/2855 (2013.01); H01L 21/2885 (2013.01); H01L 21/28556 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01);
Abstract

A method for MOM capacitance value control is disclosed. The method comprises: S: setting a target thicknesses for each metal layers; S: after forming a current metal layer, measuring a thickness of the current metal layer; when the thickness of the current metal layer is equal to or less than a threshold value, then turning to step S; S: calculating multiple capacitance variations related to the current metal layer according to the thickness of the current metal layer; wherein each of the capacitance variation related to the current metal layer is between an actual capacitance value of a MOM capacitor combination associated with the current metal layer and a target capacitance value of the same MOM capacitor combination; S: calculating updated target thicknesses for all subsequent metal layers according to the capacitance variations related to the current metal layer.

Find Patent Forward Citations

Loading…