The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Dec. 15, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Volume Chien, Tainan, TW;

Yun-Wei Cheng, Taipei, TW;

Shiu-Ko Jangjian, Tainan, TW;

Zhe-Ju Liu, Pingzhen, TW;

Kuo-Cheng Lee, Tainan, TW;

Chi-Cherng Jeng, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0232 (2014.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 27/1462 (2013.01); H01L 27/14621 (2013.01); H01L 27/14625 (2013.01); H01L 27/14627 (2013.01); H01L 27/14629 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H01L 31/0232 (2013.01); H01L 31/02164 (2013.01);
Abstract

A method for forming an image sensor device is provided. The method includes forming a photodetector in a semiconductor substrate and forming a shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the shielding layer and partially removing the dielectric layer to form a recess. The method further includes partially removing the shielding layer through the recess. In addition, the method includes forming a filter in the recess after the shielding layer is partially removed.


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