The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Jan. 29, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Kuei-Sung Chang, Kaohsiung, TW;
Nien-Tsung Tsai, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/09 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/036 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03618 (2013.01); H01L 2224/03826 (2013.01); H01L 2224/03827 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48228 (2013.01); H01L 2224/49109 (2013.01); H01L 2224/49173 (2013.01); H01L 2225/0651 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01072 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/0535 (2013.01); H01L 2924/05341 (2013.01); H01L 2924/05432 (2013.01); H01L 2924/14 (2013.01); H01L 2924/206 (2013.01);
Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method includes forming a contact pad over a semiconductor device. A passivation material is formed over the contact pad. The passivation material has a thickness and is a type of material such that an electrical connection may be made to the contact pad through the passivation material.