The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Nov. 23, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Han-Ping Pu, Taichung, TW;
Hsiao-Wen Lee, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 21/683 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 21/6835 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76885 (2013.01); H01L 21/76895 (2013.01); H01L 24/16 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/81 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/024 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13016 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/211 (2013.01); H01L 2224/215 (2013.01); H01L 2224/73267 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/06 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/07025 (2013.01);
Abstract
The present disclosure provides a packaged device that includes a first dielectric layer; a second dielectric layer, formed over the first dielectric layer, that includes a device substrate and a via extending from the first dielectric layer and through the second dielectric layer; and a third dielectric layer, formed over the second dielectric layer, that includes a conductive pillar extending through the third dielectric layer, wherein the conductive pillar is electrically coupled to the via of the second dielectric layer.