The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Feb. 27, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shen-Nan Lee, Hsinchu County, TW;
Teng-Chun Tsai, Hsinchu, TW;
Chung-Wei Hsu, Hsinchu County, TW;
Chen-Hao Wu, Keelung, TW;
Tsung-Ling Tsai, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device includes providing a substrate including a silicon oxide layer and a metal oxide layer covering the silicon oxide layer. A CMP slurry is prepared. The CMP slurry includes plural abrasive particles bearing negative charges, a Lewis base including a (XY)group, and a buffer solution. The X represents a IIIA group element or an early transitional metal, and Y represents a pnictogen element, a chalcogen element or a halogen element. The CMP slurry has a pH in a range substantially from 2 to 7. Next, a planarization operation is performed on a surface of the metal oxide layer until a surface of the silicon oxide layer exposed. The planarization operation has a high polishing selectivity of the metal oxide layer with respect to the silicon oxide layer.