The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Sep. 11, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Teng-Chun Tsai, Hsinchu, TW;
Yung-Cheng Lu, Hsinchu, TW;
Ying-Tsung Chen, Hsinchu, TW;
Tien-I Bao, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes forming a first insulating layer over a substrate, the first insulating layer having a non-planar top surface, the first insulating layer having a first etch rate. A second insulating layer is formed over the first insulating layer, the second insulating layer having a non-planar top surface, the second insulating layer having a second etch rate, the second etch rate being greater than the first etch rate. The second insulating layer is polished, the polishing partially removing the second insulating layer. The first insulating layer and the second insulating layer are non-selectively recessed.