The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Jun. 15, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Yun-Tzu Chiu, Hsinchu, TW;
Hsueh-Hui Kuo, Changhua County, TW;
Lin-Jung Wu, Miaoli County, TW;
Chih-Tsung Lee, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/0231 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/02315 (2013.01);
Abstract
A method for manufacturing semiconductor structure is disclosed. The method includes: providing a semiconductor substrate; hydrogenizing a surface of the semiconductor substrate; supplying a precursor to the surface of the semiconductor substrate; and supplying a reactant to the surface of the semiconductor substrate. An associated method for performing an atomic layer deposition (ALD) upon a semiconductor substrate and an associated atomic layer deposition (ALD) method are also disclosed.