The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Aug. 28, 2017
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Jiou-Kang Lee, Hsinchu, TW;
Wen-Chuan Tai, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device is provided. A first substrate is bonded with a second substrate. The second substrate is recessed to form a first sidewall and a first cavity laterally defined by the first sidewall. The second substrate is recessed to form a second sidewall and a second cavity laterally defined by the second sidewall. The second substrate is bonded with a third substrate at a first barometric pressure thereby forming the first cavity and the second cavity. The first sidewall is recessed to form a channel from the first cavity to an outer surface of the first sidewall. The third substrate is recessed and the first cavity is exposed to a second barometric pressure different from the first barometric pressure.