The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Oct. 05, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chih-Han Lin, Hsinchu, TW;
Shih-Chang Tsai, Hsinchu, TW;
Wen-Shuo Hsieh, Taipei, TW;
Te-Yung Liu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 27/04 (2006.01); H01L 21/02 (2006.01); H01L 51/52 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4908 (2013.01); H01L 21/02104 (2013.01); H01L 21/82345 (2013.01); H01L 21/82385 (2013.01); H01L 21/823437 (2013.01); H01L 21/823456 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823842 (2013.01); H01L 21/823864 (2013.01); H01L 27/04 (2013.01); H01L 29/7869 (2013.01); H01L 51/5203 (2013.01);
Abstract
A method for fabricating a semiconductor device is provided including an opening in a gate electrode layer to form two spaced apart gate electrode layers. An oxidation or nitridation treatment is performed in a region between the two spaced apart gate electrode layers. A first insulating layer is formed in the opening between the two spaced apart gate electrode layers.