The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Jan. 29, 2018
International Business Machines Corporation, Armonk, NY (US);
Jsr Corporation, Tokyo, JP;
Henry A. Beveridge, Beacon, NY (US);
Tatsuyoshi Kawamoto, Mie, JP;
Mahadevaiyer Krishnan, Hopewell Junction, NY (US);
Yohei Oishi, White Plains, NY (US);
Dinesh Kumar Penigalapati, Guilderland, NY (US);
Rachel S. Steiner, New York, NY (US);
James A. Tornello, CortlandtManor, NY (US);
Tatsuya Yamanaka, Mie, JP;
International Business Machines Corporation, Armonk, NY (US);
JSR CORPORATION, Tokyo, JP;
Abstract
A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.