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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10259836 B1

PDFFull Text
Date of Patent:
Apr. 16, 2019

Filed:

Nov. 29, 2016

Methods of forming thin film and fabricating integrated circuit device using niobium compound

Applicants:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

L'air Liquide, Societe Anonyme Pour L'etude ET L'exploitation Des Procedes Georges Claude, Paris, FR;

Inventors:

Jae-soon Lim, Seoul, KR;

Gyu-hee Park, Hwaseong-si, KR;

Youn-joung Cho, Hwaseong-si, KR;

Clement Lansalot, Seoul, KR;

Won-tae Noh, Seoul, KR;

Julien Lieffrig, Seoul, KR;

Joo-ho Lee, Seoul, KR;

Assignees:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;

L'Air Liquide, Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude, Paris, FR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Bret P Chen

Int. Cl.
CPC ...
C23C 16/28 (2006.01); C07F 17/00 (2006.01); C09D 5/24 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
C07F 17/00 (2013.01); C09D 5/24 (2013.01); H01L 21/02189 (2013.01); H01L 21/28088 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 27/1085 (2013.01); H01L 27/10855 (2013.01); H01L 27/10879 (2013.01); H01L 28/60 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66795 (2013.01);
Abstract

A method of forming a thin film includes forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1):Nb(RCp)(L)  Formula (1)

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