The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Feb. 01, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Feng-Yi Chang, Tainan, TW;
Fu-Che Lee, Taichung, TW;
Chieh-Te Chen, Kaohsiung, TW;
Yi-Ching Chang, Pingtung County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Abstract
A semiconductor structure includes a contact plug located on a barrier layer in a contact hole; a first conductive feature integrally formed with the contact plug on the barrier layer; a second conductive feature disposed on the interlayer dielectric layer; and a gap between the first and second conductive features. The gap includes a vertical trench recessed into the interlayer dielectric layer, and a discontinuity in the barrier layer. The discontinuity extends below the second conductive feature to form an undercut structure.