The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

Feb. 26, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Masami Oikawa, Iwate, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/66 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/67069 (2013.01); H01L 21/67109 (2013.01); H01L 21/67253 (2013.01);
Abstract

Disclosed is a substrate processing system capable of performing an etching processing collectively on a plurality of substrates accommodated in a processing container. The system includes: a first acquisition unit which acquires, as information, an amount of a film forming material formed on one of the substrates; a second acquisition unit which acquires, as information, the number of the substrates; a first calculating unit which calculates a total amount of the film forming material formed on the substrates based on the amount of the film forming material and the number of the substrates; and a second calculating unit which calculates an etching condition required to etch and remove the entire film forming material based on the total amount of the film forming materials and a relationship between a predetermined amount of the film forming material and an etching condition.


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