The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

Dec. 08, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Xikun Wang, Sunnyvale, CA (US);

Nitin Ingle, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01); H01L 21/3213 (2006.01); C23C 28/04 (2006.01); C23C 16/01 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); C23C 16/01 (2013.01); C23C 28/042 (2013.01); H01L 21/02175 (2013.01); H01L 21/28556 (2013.01); H01L 21/3065 (2013.01); H01L 21/76865 (2013.01); H01L 2924/01074 (2013.01);
Abstract

Exemplary methods for removing tungsten-containing material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may also include flowing methane into the processing region of the semiconductor processing chamber. The methods may include forming a plasma from the chlorine-containing precursor and the methane to produce plasma effluents. The methods may also include contacting a substrate with the plasma effluents. The substrate may include an exposed region of a tungsten-containing material. The plasma effluents may produce an oxychloride of tungsten. The methods may also include recessing the exposed region of the tungsten-containing material.


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