The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Jul. 27, 2017
Applicant:
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Inventor:
Nihar Mohanty, Clifton Park, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0274 (2013.01); H01L 21/02186 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31053 (2013.01); H01L 21/31111 (2013.01); H01L 21/76816 (2013.01);
Abstract
A multiple patterning process is provided with a self-aligned blocking (SAB) technique. The SAB technique trades off difficult overlay requirements for more manageable etch selectivity requirements between the various layers utilized for the patterning process. As disclosed herein, damage to sidewalls resulting from etching at the self-aligned block masking step may still occur. Damage is repaired by providing a plug layer that fills the areas of the damaged spacers. The plug layer may be the same material as forms the spacers. In this manner, the fill process provides a self-healing mechanism for damaged spacers.