The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Jul. 31, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ekmini A. De Silva, Slingerlands, NY (US);
Karen E. Petrillo, Voorheesville, NY (US);
Indira P. Seshadri, Troy, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/16 (2006.01); B82Y 40/00 (2011.01); H01L 21/3213 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
G03F 7/165 (2013.01); B82Y 40/00 (2013.01); G03F 7/094 (2013.01); G03F 7/11 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/2037 (2013.01); H01L 21/0274 (2013.01); H01L 21/0276 (2013.01); H01L 21/32139 (2013.01);
Abstract
An extreme ultraviolet lithography pattern stack, including, an inorganic hardmask layer, an under layer on the inorganic hardmask layer, and a resist layer on the under layer, where the inorganic hardmask layer, under layer, and resist layer have a combined thickness in the range of about 8.5 nm to about 70 nm.