The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Feb. 10, 2017
Applicant:

Win Semiconductors Corp., Kuei Shan Hsiang, Tao Yuan Shien, TW;

Inventors:

Chia-Ta Chang, Tao Yuan Shien, TW;

Chih-Feng Chiang, Tao Yuan Shien, TW;

Tzu-Sheng Hsieh, Tao Yuan Shien, TW;

Assignee:

WIN SEMICONDUCTORS CORP., Tao Yuan Shien, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 9/58 (2006.01); H03H 9/17 (2006.01); H03H 9/54 (2006.01);
U.S. Cl.
CPC ...
H03H 9/583 (2013.01); H03H 9/17 (2013.01); H03H 9/54 (2013.01);
Abstract

A bulk acoustic wave resonator with a mass adjustment structure comprises a supporting layer, a lower metal layer, a piezoelectric layer, an upper metal layer and a mass adjustment structure. The supporting layer is formed on a substrate. The supporting layer has a cavity, and the cavity has a top-inner surface. The lower metal layer is formed on the supporting layer. The piezoelectric layer is formed on the lower metal layer. The upper metal layer is formed on the piezoelectric layer. An acoustic wave resonance region is defined by an overlapping region of projections of the upper metal layer, the piezoelectric layer, the lower metal layer, the supporting layer and the cavity. The acoustic wave resonance region is divided into a peripheral region and a central region. The mass adjustment structure comprises a peripheral mass adjustment structure formed on the top-inner surface within the peripheral region.


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