The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Oct. 23, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Koichi Nagami, Miyagi, JP;

Norikazu Yamada, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 7/38 (2006.01); H03H 7/40 (2006.01);
U.S. Cl.
CPC ...
H03H 7/40 (2013.01);
Abstract

Each of a first high frequency power supply and a second high frequency power supply of a plasma processing apparatus is configured to selectively output a continuous wave, a modulated wave and a double-modulated wave. A first average value which determines an impedance at a load side of the first high frequency power supply and a second average value which determines an impedance at a load side of the second high frequency power supply are obtained by using any one of two averaging methods depending on a first high frequency power output from the first high frequency power supply and a second high frequency power output from the second high frequency power supply. An impedance matching of each of a first matching device and a second matching device is performed based on the first average value and the second average value.


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