The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Jan. 22, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Li-Chiang Chen, Tainan, TW;
Fu-Che Lee, Taichung, TW;
Ming-Feng Kuo, Tainan, TW;
Chieh-Te Chen, Kaohsiung, TW;
Hsien-Shih Chu, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Abstract
The present invention provides a method for forming buried word lines. Firstly, a substrate is provided, having a plurality of shallow trench isolations disposed therein, next, a plurality of first patterned material layers are formed on the substrate, a plurality of first recesses are disposed between every two adjacent first patterned material layers, a second patterned material layer is formed in the first recesses, and using the first patterned material layers and the second patterned material layer as the protect layers, and a first etching process is then performed, to form a plurality of second recesses in the substrate.