The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Nov. 23, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Wen-Chin Lin, Tainan, TW;
Jhih-Yuan Chen, Kaohsiung, TW;
Syue-Ren Wu, Hsinchu, TW;
Meng-Hsun Wu, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Abstract
A semiconductor device includes a substrate having a memory region and a peripheral region defined thereon, wherein the peripheral region comprises at least one transistor, the memory region comprises a plurality of memory cells, each memory cell comprises at least one gate structure and a capacitor structure, a mask layer disposed on the capacitor structure in the memory region, and a dielectric layer disposed on the substrate within the peripheral region, wherein a top surface of the dielectric layer is aligned with a top surface of the mask layer.