The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Oct. 02, 2012
Asml Netherlands B.v., Veldhoven, NL;
Thanh Trung Nguyen, Eindhoven, NL;
Jozef Maria Finders, Veldhoven, NL;
Wilhelmus Sebastianus Marcus Maria Ketelaars, Eindhoven, NL;
Sander Frederik Wuister, Eindhoven, NL;
Eddy Cornelis Antonius Van der Heijden, Netersel, NL;
Hieronymus Johannus Christiaan Meessen, Eindhoven, NL;
Roelof Koole, Eindhoven, NL;
Emiel Peeters, Eindhoven, NL;
Christianus Martinus Van Heesch, Eindhoven, NL;
Aurelie Marie Andree Brizard, Eindhoven, NL;
Henri Marie Joseph Boots, Best, NL;
Tamara Druzhinina, Eindhoven, NL;
Jessica Margaretha De Ruiter, Eindhoven, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.