The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2019

Filed:

Oct. 30, 2017
Applicant:

Stats Chippac Pte. Ltd., Singapore, SG;

Inventors:

JinHee Jung, Busan, KR;

HyungSang Park, Gyeonggi-do, KR;

SungSoo Kim, Seoul, KR;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 49/02 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H05K 1/18 (2006.01); H01L 23/498 (2006.01); H01L 23/50 (2006.01); H01L 21/48 (2006.01); H05K 3/46 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 21/6835 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/25 (2013.01); H05K 1/185 (2013.01); H01L 21/486 (2013.01); H01L 23/49827 (2013.01); H01L 23/50 (2013.01); H01L 2221/68345 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/2518 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/82031 (2013.01); H01L 2224/82039 (2013.01); H01L 2224/82047 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/92144 (2013.01); H05K 3/4664 (2013.01); H05K 2201/10015 (2013.01);
Abstract

A semiconductor device comprises a first conductive layer. A second conductive layer is formed over the first conductive layer. A semiconductor component is disposed over the first conductive layer. The second conductive layer lies in a plane between a top surface of the semiconductor component and a bottom surface of the semiconductor component. A third conductive layer is formed over the semiconductor component opposite the first conductive layer. The semiconductor device includes a symmetrical structure. A first insulating layer is formed between the first conductive layer and semiconductor component. A second insulating layer is formed between the semiconductor component and third conductive layer. A height of the first insulating layer between the first conductive layer and semiconductor component is between 90% and 110% of a height of the second insulating layer between the semiconductor component and third conductive layer. The semiconductor component includes a passive device.


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