The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Apr. 14, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Fu-Cheng Yen, Taipei, TW;
Tsung-Mu Yang, Tainan, TW;
Sheng-Hsu Liu, Changhua County, TW;
Tsang-Hsuan Wang, Kaohsiung, TW;
Chun-Liang Kuo, Kaohsiung, TW;
Yu-Ming Hsu, Changhua County, TW;
Chung-Min Tsai, Tainan, TW;
Yi-Wei Chen, Taichung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 29/7848 (2013.01); H01L 21/02381 (2013.01); H01L 21/02576 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.