The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Feb. 19, 2018
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Benjamin Schmiege, Santa Clara, CA (US);
Nitin K. Ingle, Santa Clara, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Jeffrey W. Anthis, San Jose, CA (US);
Xikun Wang, Sunnyvale, CA (US);
Jie Liu, Sunnyvale, CA (US);
David Benjaminson, Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/12 (2006.01); C30B 33/12 (2006.01); C23F 4/00 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23F 1/12 (2013.01); C23F 4/00 (2013.01); C30B 33/12 (2013.01); H01J 37/32009 (2013.01); H01J 2237/334 (2013.01);
Abstract
Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.