The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10230043 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 12, 2019

Filed:

Mar. 21, 2017
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Samsung Electronics, Co., Ltd., Gyeonggi-Do, KR;

Inventors:

Guohan Hu, Yorktown Heights, NY (US);

Younghyun Kim, Seoul, KR;

Chandrasekara Kothandaraman, New York, NY (US);

Jeong-Heon Park, Seoul, KR;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 27/226 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

Memory devices and methods of forming the same include forming a memory stack over a bottom electrode. The memory stack has a fixed magnetic layer, a tunnel barrier layer on the fixed magnetic layer, and a free magnetic layer formed on the tunnel barrier layer. A boron-segregating layer is formed directly on the free magnetic layer. The memory stack is etched into a pillar. A top electrode is formed over the pillar.


Find Patent Forward Citations

Hu, Guohan. (2019). Boron segregation in magnetic tunnel junctions (U.S. Patent No. 10230043). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10230043

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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