The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2019

Filed:

Jul. 31, 2014
Applicant:

Nova Measuring Instruments Ltd., Rehovot, IL;

Inventor:

Igor Turovets, Moshav Givat Yarim, IL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 37/20 (2012.01); H01L 21/321 (2006.01); H01L 21/67 (2006.01); B24B 37/015 (2012.01); B24B 37/04 (2012.01); H01L 21/268 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
B24B 37/20 (2013.01); B24B 37/015 (2013.01); B24B 37/04 (2013.01); H01L 21/268 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01); H01L 21/32125 (2013.01); H01L 21/67219 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01);
Abstract

A surface planarization system is presented. The system comprises an external energy source for generating a localized energy distribution within a processing region, and a control unit for operating the external energy source to create, by the localized energy distribution, a predetermined temperature pattern within the processing region such that different locations of the processing region are subjected to different temperatures. This provides that when a sample (e.g. semiconductor wafer) during its interaction with an etching material composition is located in the processing region, the temperature pattern at different locations of the sample's surface creates different material removal rates by the etching material composition (different etch rates).


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