The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

Nov. 27, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruqiang Bao, Niskayuna, NY (US);

Dechao Guo, Niskayuna, NY (US);

Derrick Liu, Albany, NY (US);

Huimei Zhou, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 27/11 (2006.01); H01L 27/11529 (2017.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/42376 (2013.01); H01L 29/785 (2013.01); H01L 29/7842 (2013.01); H01L 29/7855 (2013.01); H01L 27/1116 (2013.01); H01L 27/11529 (2013.01);
Abstract

A method of forming an arrangement of long and short fins on a substrate, including forming a plurality of finFET devices having long fins on the substrate, where the long fins have a fin length in the range of about 180 nm to about 350 nm, and forming a plurality of finFET devices having short fins on the substrate, where the short fins have a fin length in the range of about 60 nm to about 140 nm, wherein at least one of the plurality of finFET devices having a long fin is adjacent to at least one of the plurality of finFET devices having a short fin.


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