The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

May. 27, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Toshihisa Ozu, Amagasaki, JP;

Naoki Matsumoto, Amagasaki, JP;

Takashi Tsukamoto, Amagasaki, JP;

Kazuto Takai, Amagasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); C23C 16/455 (2013.01); C23C 16/45523 (2013.01); C23C 16/45561 (2013.01); H01J 37/3244 (2013.01); H01J 37/32449 (2013.01); H01L 21/30655 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32137 (2013.01); H01J 2237/334 (2013.01);
Abstract

Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.


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