The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

May. 24, 2011
Applicants:

Thomas B. Richardson, Killingworth, CT (US);

Wenbo Shao, Milford, CT (US);

Xuan Lin, Northford, CT (US);

Cai Wang, Woodbridge, CT (US);

Vincent Paneccasio, Jr., Madison, CT (US);

Joseph A. Abys, Guilford, CT (US);

Yun Zhang, Warren, NJ (US);

Richard Hurtubise, Clinton, CT (US);

Chen Wang, New Haven, CT (US);

Inventors:

Thomas B. Richardson, Killingworth, CT (US);

Wenbo Shao, Milford, CT (US);

Xuan Lin, Northford, CT (US);

Cai Wang, Woodbridge, CT (US);

Vincent Paneccasio, Jr., Madison, CT (US);

Joseph A. Abys, Guilford, CT (US);

Yun Zhang, Warren, NJ (US);

Richard Hurtubise, Clinton, CT (US);

Chen Wang, New Haven, CT (US);

Assignee:

MacDermid Enthone Inc., Waterbury, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 5/02 (2006.01); C25D 3/38 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01); C25D 7/12 (2006.01);
U.S. Cl.
CPC ...
C25D 3/38 (2013.01); C25D 5/02 (2013.01); C25D 7/123 (2013.01); H01L 21/2885 (2013.01); H01L 21/76898 (2013.01);
Abstract

A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature. The deposition composition comprises (a) a source of copper ions; (b) an acid selected from among an inorganic acid, organic sulfonic acid, and mixtures thereof; (c) an organic disulfide compound; (d) a compound selected from the group consisting of a reaction product of benzyl chloride and hydroxyethyl polyethyleneimine, a quaternized dipyridyl compound, and a combination thereof; and (d) chloride ions.


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