The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Sep. 06, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Chi-Hsuan Cheng, Kaohsiung, TW;
Cheng-Pu Chiu, New Taipei, TW;
Yu-Chih Su, Tainan, TW;
Chih-Yi Wang, Tainan, TW;
Chin-Yang Hsieh, Tainan, TW;
Tien-Shan Hsu, Tainan, TW;
Yao-Jhan Wang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, Taiwan, CN;
Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a first and a second fin structures, a first, a second and a third isolation structures, and a first and a second gate structures. The first and second fin structures are disposed in a substrate. The first isolation structure is disposed in the substrate and surrounds the first and second fin structures. The second isolation structure is disposed in the first fin structure, and a top surface of the second isolation structure is leveled with a top surface of the first and second fin structures. The third isolation structure is disposed in the second fin shaped structure, and a top surface of the third isolation structure is lower than the top surface of the first and second fin structures. The first and second gate structures are disposed on the second and third isolation structures, respectively.