The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Jan. 20, 2016
International Business Machines Corporation, Armonk, NY (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
William J. Gallagher, Ardsley, NY (US);
Marinus Johannes Petrus Hopstaken, Carmel, NY (US);
Ko-Tao Lee, White Plains, NY (US);
Tomas Palacios, Belmont, MA (US);
Daniel Piedra, Cambridge, MA (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
MASSACHUSETTS INSTITUTE OF TECHNOLOGY, Cambridge, MA (US);
Abstract
A GaN device is formed on a semiconductor substrate having a plurality of recessed regions formed in a surface thereof. A seed layer, optional buffer layer, and gallium nitride layer such as a carbon-doped gallium nitride layer are successively deposited within the recessed regions. Improved current collapse response of the GaN device is attributed to maximum length and width dimensions of the multilayer stack.