The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2019

Filed:

Nov. 22, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tsubasa Watanabe, Oshu, JP;

Yamato Tonegawa, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/458 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C07F 7/00 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/02211 (2013.01); C07F 7/00 (2013.01); C23C 16/345 (2013.01); C23C 16/4408 (2013.01); C23C 16/4584 (2013.01); C23C 16/45553 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 27/11582 (2013.01);
Abstract

A method of forming a silicon-containing film includes: an adsorption step of supplying a silicon-containing gas represented by a general formula XSiCl(wherein X is an element whose bonding energy with Si is smaller than bonding energy of a Si—Cl bond) into a processing chamber accommodating substrates to cause the silicon-containing gas to be adsorbed to a surface of each of the substrates; and a reaction step of supplying a reaction gas reacting with the silicon-containing gas into the processing chamber to cause the silicon-containing gas adsorbed to the surface of each of the substrates to react with the reaction gas.


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