Charged particle beam drawing method and charged particle beam drawing apparatus

Abstract

In one embodiment, a charged particle beam drawing method includes calculating a resist film reduction amount caused by etching from data representing a relation between a resist area rate and a resist film reduction amount and from an area rate of a pattern to be drawn, calculating a remaining resist-film thickness distribution by employing both an initial thickness of the resist film and the resist film reduction amount, estimating a dimension distribution of the light-shielding film pattern from the remaining resist-film thickness distribution, creating a first dimension correction map by determining a dimension correction amount from the estimated dimension distribution, creating a third dimension correction map by synthesizing a second dimension correction map to correct a relatively macroscopic dimensional variation and the first dimension correction map, and calculating an irradiation dose of the charged particle beam by employing the third dimension correction map.