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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10211313 B1

PDFFull Text
Date of Patent:
Feb. 19, 2019

Filed:

Aug. 16, 2017

Semiconductor device and method for fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Shih-Hung Tsai, Tainan, TW;

Po-Kuang Hsieh, Kaohsiung, TW;

Yu-Ting Tseng, Tainan, TW;

Cheng-Ping Kuo, Pingtung County, TW;

Kuan-Hao Tseng, Kaohsiung, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Su C Kim

Assistant Examiner:

David S Wilbert

Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 21/02194 (2013.01); H01L 21/02356 (2013.01); H01L 21/28255 (2013.01); H01L 29/408 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming an interlayer dielectric (ILD) layer around the gate structure; removing the gate structure to form a first recess; forming ferroelectric (FE) layer in the first recess; forming a compressive layer on the FE layer; performing a thermal treatment process; removing the compressive layer; and forming a work function metal layer in the recess.

Find Patent Forward Citations

Tsai, Shih-Hung. (2019). Semiconductor device and method for fabricating the same (U.S. Patent No. 10211313). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10211313

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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