The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Jan. 10, 2018
Infineon Technologies Ag, Neubiberg, DE;
Ralf Siemieniec, Villach, AT;
Dethard Peters, Hoechstadt, DE;
Romain Esteve, Villach, AT;
Wolfgang Bergner, Klagenfurt, AT;
Thomas Aichinger, Villach, AT;
Daniel Kueck, Villach, AT;
Roland Rupp, Lauf, DE;
Bernd Zippelius, Erlangen, DE;
Karlheinz Feldrapp, Uttenreuth, DE;
Christian Strenger, Munich, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 eV, the semiconductor body having a diode region and a source region. The semiconductor device further includes a trench gate structure having a first sidewall and a second sidewall opposite the first sidewall, the first sidewall and the second sidewall extending along a common longitudinal direction. A doping concentration of a first doping type is higher in the diode region than in the source region. The trench gate structure projects from a first surface of the semiconductor body into the semiconductor body. A first portion of the second sidewall at the first surface is directly adjoined by the source region. A second portion of the second sidewall is in direct contact with the diode region. Additional semiconductor device embodiments are provided.