The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Dec. 19, 2016
Lam Research Corporation, Fremont, CA (US);
Deqi Wang, San Jose, CA (US);
Gang Liu, Fremont, CA (US);
Anand Chandrashekar, Fremont, CA (US);
Tsung-Han Yang, San Jose, CA (US);
John W. Griswold, Saratoga, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
The methods, systems and apparatus described herein relate to chamber conditioning for remote plasma processes, in particular remote nitrogen-based plasma processes. Certain implementations of the disclosure relate to remote plasma inhibition processes for feature fill that include chamber conditioning. Embodiments of the disclosure relate to exposing remote plasma processing chambers to fluorine species prior to nitrogen-based remote plasma processing of substrates such as semiconductor wafers. Within-wafer uniformity and wafer-to-wafer uniformity is improved.