The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Aug. 04, 2011
Franz Hirler, Isen, DE;
Anton Mauder, Kolbermoor, DE;
Thomas Raker, Unterfoehring, DE;
Hans-joachim Schulze, Taufkirchen, DE;
Wolfgang Werner, Munich, DE;
Franz Hirler, Isen, DE;
Anton Mauder, Kolbermoor, DE;
Thomas Raker, Unterfoehring, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Wolfgang Werner, Munich, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency γ of less than 0.7.