The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Aug. 16, 2016
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hidetami Yaegashi, Tokyo, JP;
Kenichi Oyama, Tokyo, JP;
Masatoshi Yamato, Nirasaki, JP;
Tomohiro Iseki, Koshi, JP;
Toyohisa Tsuruda, Koshi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/36 (2006.01); G03F 7/004 (2006.01); H01L 21/027 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); G03F 7/0045 (2013.01); G03F 7/20 (2013.01); G03F 7/36 (2013.01); H01L 21/0276 (2013.01);
Abstract
There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.