The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Apr. 11, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chung-Yu Huang, Tainan, TW;
Kuan-Cheng Su, Taipei, TW;
Tien-Hao Tang, Hsinchu, TW;
Ping-Jui Chen, Pingtung County, TW;
Po-Ya Lai, Changhua County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/0207 (2013.01); H01L 29/0649 (2013.01); H01L 29/785 (2013.01);
Abstract
An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a doped region formed in the source region. The source region and the drain region include a first conductivity type, and the doped region includes a second conductivity type complementary to the first conductivity type. The doped region is electrically connected to a ground potential.